Kinetic processes and Phase-transition of CVD processes for Ti3Si C2

Juergen Geiser , Robert Roehle

Preprint series: Institut für Mathematik, Humboldt-Universität zu Berlin (ISSN 0863-0976), 23 pp.

MSC 2000

35K25 General theory of higher-order, parabolic equations

35K20 Boundary value problems for second-order, parabolic equations

Abstract
In this paper we present a kinetic model based on numerical simulations of a chemical vapor deposition (CVD) process. We discuss a model that is based on kinetics of the deposition rates to the material. Such a simple model can explain the experimental results. Based on experiments with $Ti_3 Si C_2$ we verify our model. Here different processes of ionized $Ti^+$, $Ti^{++}$ and $C$ are important to achieve our stoichiometry. The numerical methods are based on iterative schemes to solve coupled and nonlinear differential equations. The results are discussed with physical experiments to give a valid model for the assumed growth of thin layers.