High power pulsed magnetron sputtering
DC sputtering
Hard sphere interaction
Screened Coulomb
viral expansion
implantation model
Monte Carlo simulations
Monte Carlo simulations concerning modeling DC and high power pulsed magnetron sputtering for Ti_3SiC_2 including high pressures and ion deposition probabilities
Jürgen Geiser
Geiser
Jürgen
Institut für Mathematik, Humboldt-Universität zu Berlin (ISSN 0863-0976), 17 pp.
#### Monte Carlo simulations concerning modeling DC and high power pulsed magnetron sputtering for Ti_3SiC_2 including high pressures and ion deposition probabilities

Jürgen Geiser

**Preprint series:**
Institut für Mathematik, Humboldt-Universität zu Berlin (ISSN 0863-0976), 17 pp.

**MSC 2000**

- 74A25 Molecular, statistical, and kinetic theories

**Abstract**

We motivate our study by simulating the particle transport
of a thin film deposition process done by PVD (physical vapor deposition)
processes.
In this paper we present a new model taken into account a higher pressure
regimes in a sputter process.
We propose a collision models for projectile and target collisions in
order to compute the mean free path and include the virial coefficients
that considered interacting gas particles.
A detailed description of collision models of the Monte Carlo Simulations
is discussed for high power impulse magnetron sputtering
(HIPIMS) and DC sputtering in lower pressure regimes.
We derive an equation for the mean free
path for arbitrary interactions (cross sections) which (most important)
includes the relative velocity between the projectiles and targets based
on physical first principles and extend with higher order Virial terms .
At the substrate we simulate the implantation of the
particles with the help of TRIM, based on result of the energy that
are computed with the Monte Carlo methods.
We apply our results to three
interaction models: hard sphere interaction, Screened Coulomb
interaction and a mixture of the last mentioned interactions.
The deposition to realistic geometries, which have
sharp angles included, are presented.
Because of the strong convective process of a HIPIMS method,
the low diffusion process allows not to deposit into delicate
geometries, see [Christ2005].
This can be improved by rotating the target
to a more or less perpendicular angle.

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